SM7308CSKP datasheet(4/14 Pages) SINOPWER

4 / 14 page

SM7308CSKP

www.sinopowersemi.com

Rev. A.1 - November, 2015

P Channel Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

P Channel

Unit

Min.

Typ.

Max.

Static Characteristics

BVDSS Drain-Source Breakdown Voltage

VGS=0V, IDS=-250mA

-30

IDSS

Zero Gate Voltage Drain Current

VDS=-24V, VGS=0V

-1

TJ=85°C

-30

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=-250mA

-1.3

-1.8

-2.3

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

±10

RDS(ON)

Drain-Source On-state Resistance

VGS=-10V, IDS=-7A

VGS=-4.5V, IDS=-4A

Diode Characteristics

VSD

Diode Forward Voltage

ISD=-1A, VGS=0V

-0.75

-1

trr

Reverse Recovery Time

ISD=-7.0A,

dlSD/dt=100A/ms

Qrr

Reverse Recovery Charge

Dynamic Characteristics

Gate Resistance

VGS=0V,VDS=0V,f=1MHz

Ciss

Input Capacitance

VGS=0V,

VDS=-15V,

Frequency=1.0MHz

750

975

Coss

Output Capacitance

142

Crss

Reverse Transfer Capacitance

102

td(ON)

Turn-on Delay Time

VDD=-15V, RL=15W,

IDS=-1A, VGEN=-10V,

RG=6W

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

Gate Charge Characteristics

Total Gate Charge

VDS=-15V, VGS=-4.5V,

IDS=-7.0A

Total Gate Charge

VDS=-15V, VGS=-10V,

IDS=-7.0A

Qgth

Threshold Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

Note d：Pulse test ; pulse width

£300ms, duty cycle£2%.

Note e：Guaranteed by design, not subject to production testing.

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