2N2880

NPN POWER TRANSISTORS - 2

Solitron Devices, Inc. • 3301 Electronics Way, West Palm Beach, Florida 33407, USA • +1 561-848-4311 • sales@solitrondevices.com

© 2018 Solitron Devices, Inc.

This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences from printing errors or inaccuracies. All specifications are subject to change without notice.

ELECTRICAL SPECIFICATIONS

Typical @ 25°C unless otherwise noted

Parameter

Symbol

Min.

Max.

Unit

Collector-Emitter Breakdown Voltage

I

V

(BR)CEO

80

Vdc

Collector-Base Breakdown Voltage

I

V

(BR)CBO

110

Vdc

Emitter-Base Breakdown Voltage

I

V

(BR)EBO

8

Vdc

Collector-Emitter Cutoff Current

V

I

CEX

1.0

µA

Collector-Emitter Cutoff Current

V

I

CEO

20

µA

Emitter-Base Cutoff Current

V

I

EBO

0.2

µA

Forward-Current Transfer Ratio

I

I

I

h

FE

40

40

15

120

120

Thermal Resistance

R

ӨJC

3.33

°C/W

Base-Emitter Saturated Voltage

I

V

BE(sat)

1.2

Vdc

Collector-Emitter Saturated Voltage

I

I

V

CE(sat)

0.25

1.5

Vdc

Vdc

Small-Signal Short-Circuit Forward Current Transfer Ratio

I

|h

3

12

Forward Current Transfer Ratio

I

h

fe

40

140

Output Capacitance

V

C

obo

150

pF

Pulse Rise Time

t

r

300

ns

Pulse Fall Time

t

f

300

ns

SAFE OPERATING AREA

Test 1 - V

Test 2 - V