©

2001

MOS FIELD EFFECT TRANSISTOR

SWITCHING

DUAL P-CHANNEL POWER MOS FET

DATA SHEET

Document No.

G15380EJ2V0DS00 (2nd edition)

Date Published

June 2002 NS CP(K)

Printed in Japan

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

DESCRIPTION

The

µ PA1774 is Dual P-channel MOS Field Effect

Transistor.

FEATURES

• Dual chip type

• Low on-state resistance

• Low input capacitance

• Built-in G-S protection diode

• Small and surface mount package (Power SOP8)

–60

V

m20

V

m2.8

A

Drain Current (pulse)

Note1

m18

A

Total Power Dissipation (1 unit)

Note2

0.6

W

Total Power Dissipation (2 unit)

Note2

0.8

W

Channel Temperature

150

°C

Storage Temperature

–55 to 150

°C

Single Avalanche Current

Note3

–2.8

A

Single Avalanche Energy

Note3

0.78

mJ

Notes 1. PW

≤ 10

µs, Duty Cycle ≤ 1%

2. Mounted on Glass Epoxy Board of 1600 mm

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

ORDERING INFORMATION

PART NUMBER

PACKAGE

µ PA1774G

Power SOP8

PACKAGE DRAWING (Unit: mm)

1.27

0.12 M

6.0 ±0.3

4.4

0.40

+0.10

–0.05

0.78 MAX.

0.8

0.5 ±0.2

5.37 MAX.

0.10

14

85

1

: Source 1

2

: Gate 1

7, 8 : Drain 1

3

: Source 2

4

: Gate 2

5, 6 : Drain 2

EQUIVALENT CIRCUIT

(1/2 circuit)

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain