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All specifications may change without notice

Version 1.0

GaN Power Transistors

IE21056WD

Typical Pulsed Signal Performance

(Tc=25℃, Measured in the IE21056WD test board amplifier circuit)

Typical LTE Signal Performance

(Tc=25℃, Measured in the IE21056WD test board amplifier circuit)

LTE 10MHz BW, PAPR=7.5dB @ 0.01% Probability on CCDF

Peak Power

44

45

46

47

48

49

50

1990

2020

2050

2080

2110

2140

2170

2200

2230

2260

2290

Frequency [MHz]

Peak Power vs. Frequency

Power Gain

10

12

14

16

18

20

22

25

27

29

31

33

35

37

39

41

43

45

47

49

Output Power [dBm]

Pulsed Power Gain vs. Output Power

Power Gain 2110MHz

Power Gain 2140MHz

Power Gain 2170MHz

Power Gain

Drain Effiiciency

ACLR

PARC

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

0

5

15

20

25

30

35

40

45

50

55

60

65

70

2015

2040

2065

2090

2115

2140

2165

2190

2215

2240

2265

Frequency [MHz]

LTE Power Gain, Drain Efficiency, ACLR, PARC vs. Frequency

Power Gain

Drain Effiiciency

ACLR-L

ACLR-U

PARC

Power Gain

Drain Efficiency

0

10

20

30

40

50

60

70

8

10

12

14

16

18

20

22

25

27

29

31

33

35

37

39

41

43

Output Power [dBm]

Power Gain, Drain Efficiency vs. Output Power

Power Gain 2115MHz

Power Gain 2140MHz

Power Gain 2165MHz

Drain Efficiency 2115MHz

Drain Efficiency 2140MHz

Drain Efficiency 2165MHz

PARC

ACLR

-45

-40

-35

-30

-25

-20

-15

-5

-4

-3

-2

-1

0

1

25

27

29

31

33

35

37

39

41

43

Output Power [dBm]

PARC, ACLR vs. Output Power

PARC 2115MHz

PARC 2140MHz

PARC 2165MHz

ACLR-L 2115MHz

ACLR-L 2140MHz

ACLR-L 2165MHz

ACLR-U 2115MHz

ACLR-U 2140MHz

ACLR-U 2165MHz