TE28F320B3BC90 datasheet(29/58 Pages) INTEL

Nome de Peças	TE28F320B3BC90

Descrição Electrónicos	3 Volt Advanced Boot Block Flash Memory

PDF	58 Pages

Scroll/Zoom	100%

Fabricante Electrônico	INTEL [Intel Corporation]

Página de início	http://www.intel.com

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29 / 58 page

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

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4.5

AC Characteristics —Read Operations

NOTES:

1. OE# may be delayed up to tELQV–tGLQV after the falling edge of CE# without impact on tELQV.

2. Sampled, but not 100% tested.

See Figure 7, “AC Waveform: Read Operations” on page 26.

See Figure 5, “Input/Output Reference Waveform” on page 22 for timing measurements and maximum allowable

input slew rate.

Sym

Parameter

Density

4/8 Mbit

Unit

Product

90 ns

110 ns

VCC

3.0 V–3.6 V

2.7 V–3.6 V

3.0 V–3.6 V

2.7 V–3.6 V

Min

Max

Min

Max

Min

Max

Min

Max

tAVAV

Read Cycle Time

100

110

tAVQV

Address to Output Delay

100

110

tELQV

CE# to Output Delay(1)

100

110

tGLQV

OE# to Output Delay(1)

tPHQV

RP# to Output Delay

600

tELQX

CE# to Output in Low Z(2)

tGLQX

OE# to Output in Low Z(2)

tEHQZ

CE# to Output in High Z(2)

tGHQZ

OE# to Output in High Z(2)

R10

tOH

Output Hold from Address,

CE#, or OE# Change,

Whichever Occurs First(2)

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