12PT06F-S datasheet(5/7 Pages) NELLSEMI

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0.0

0.2

0.4

0.6

0.8

1.6

0.01

0.10

1.00

Fig.5 Relative variation of thermal impedance

Junction to ambient versus pulse duration

Fig.6 Relative variation of gate trigger and

holding current versus junction

temperature for I =200µA

-40

1E+1

1E-2

1E-1

1E+0

1E+2 5E+2

1.0

1.2

1.4

1.8

2.0

-20

100

120 140

I ,I ,I [T ] / I ,I ,I [Tj=25°C]

GT H L j

GT H L

K=[Zth(j-a)/Rth(j-a)]

t (s)

D²PAK

TO-220AB/IPAK

Device mounted on FR4 with

Recommended pad layout

DPAK

IGT

l & IL

R =1KΩ

T (°C)

(DANK)

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0.1

200

400

1.0

Fig.9 Relative variation of dV/dt immunity

versus gate-cathode resistance

0.0

0.5

1.0

1.5

0.0

0.2

4.0

5.0

-20

-40

3.5

4.5

100

140

120

0.4

dV/dt[R ] / dV/dt[R =220Ω]

Fig.7 Relative variation of gate trigger and

holding current versus junction

temperature

Fig.8 Relative variation of holding current

versus gate-cathode resistance

(typical values)

dV/dt[C ] / dV/dt[R =220Ω]

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

1E-2

1E-1

1E+0

1E+1

600

800

1000

1200

10.0

125

150

100

2.0

2.5

3.0

IH[RGK] / IH[RGK=1KΩ]

I ,I ,I [Tj] / I ,I ,I [Tj=25°C]

GT H L

3.0

2.5

2.0

1.5

1.0

0.5

0.0

(Typical values)

Fig.10 Relative variation of dV/dt immunity

versus gate-cathode capacitance

(typical values) for I =200µA

5mA & 15mA Series

IGT

l & IL

T (°C)

R (KΩ)

Tj=125°C

V =0.67 X V

DRM

R (KΩ)

C (nF)

V =0.67 X V

DRM

Tj=125°C

R =220Ω

3.5

4.0

200µA Series

Tj=25°C

12PT SeriesRoHS

RoHS

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