STPS2045C datasheet(4/8 Pages) STMICROELECTRONICS

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STPS2045C

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Figure

Relative

variation

thermal

impedance junction to ambient versus pulse

duration (TO-220AB, D2PAK, I2PAK)

Figure

Relative

variation

thermal

impedance junction to ambient versus pulse

duration (TO-220FPAB)

Figure 9: Reverse leakage current versus

reverse voltage applied

(typical values, per

diode)

Figure

10:

Junction

capacitance

versus

reverse voltage applied (typical values, per

diode)

Figure 11: Forward voltage drop

versus

forward current (maximum values, per diode)

Figure 12: Thermal resistance junction to

ambient versus copper surface under tab

(Epoxy

printed

circuit

board,

copper

thickness: 35µm) (D2PAK)

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

t (s)

Z/R

th(j-c)

δ=tp/T

1E-3

1E-2

1E-1

1E+0

1E+1

0.0

0.2

0.4

0.6

0.8

1.0

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

t (s)

Z/R

th(j-c)

δ=tp/T

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

5E+4

I (µA)

V (V)

T =150°C

T =125°C

T =100°C

T =75°C

T =50°C

T =25°C

100

200

500

1000

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.1

1.0

10.0

100.0

(A)

T =125°C

(typical values)

T =125°C

T =25°C

(V)

S(cm²)

(°C/W)

th(j-a)

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