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STPS20H100CF Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças STPS20H100CF
Descrição Electrónicos  HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
PDF  8 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS20H100CF Folha de dados(HTML) 1 Page - STMicroelectronics

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STPS20H100CT/CF/CG/CR/CFP
®
July 2003 - Ed: 4G
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
IF(AV)
2x10A
VRRM
100 V
Tj
175°C
VF (max)
0.64 V
MAIN PRODUCT CHARACTERISTICS
s
NEGLIGIBLE SWITCHING LOSSES
s
HIGH JUNCTION TEMPERATURE CAPABILITY
s
GOOD TRADE OFF BETWEEN LEAKAGE CUR-
RENT AND FORWARD VOLTAGE DROP
s
LOW LEAKAGE CURRENT
s
AVALANCHE RATED
s
INSULATED
PACKAGE:
ISOWATT220AB,
TO-220FPAB
Insulating Voltage = 2000V DC
Capacitance = 45 pF
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Dual center tap schottky rectifier designed for
high
frequency
miniature
Switched
Mode
Power Supplies such as adaptators and on
board DC/DC converters.
DESCRIPTION
TO-220AB
STPS20H100CT
A1
A2
K
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
IF(RMS)
RMS forward current
30
A
IF(AV)
Average forward
current
δ = 0.5
TO-220AB
D
2PAK/I2PAK
Tc = 160°C
per diode
per device
10
20
A
ISOWATT220AB
TO-220FPAB
Tc = 145°C
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
250
A
IRRM
Repetitive peak reverse current
tp=2µs square F = 1kHz
1
A
IRSM
Non repetitive peak reverse current
tp = 100 µs square
3
A
PARM
Repetitive peak avalanche power
tp = 1µs
Tj = 25°C
10800
W
Tstg
Storage temperature range
- 65 to + 175
°C
Tj
Maximum operating junction temperature *
175
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/µs
ABSOLUTE RATINGS (limiting values, per diode)
I2PAK
STPS20H100CR
D2PAK
STPS20H100CG
K
A1
A2
K
A2
A1
A1
A2
K
ISOWATT220AB
STPS20H100CF
K
A2
A1
*:
dPtot
dTj
Rth j
a
<
−
1
()
thermal runaway condition for a diode on its own heatsink
A1
A2
K
TO-220FPAB
STPS20H100CFP


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