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71321LA55TFGI Folha de dados(PDF) 8 Page - Integrated Device Technology

Nome de Peças 71321LA55TFGI
Descrição Electrónicos  HIGH SPEED 2K X 8 DUAL-PORT STATIC RAM
PDF  18 Pages
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Fabricante Electrônico  IDT [Integrated Device Technology]
Página de início  http://www.idt.com
Logo IDT - Integrated Device Technology

71321LA55TFGI Folha de dados(HTML) 8 Page - Integrated Device Technology

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6.42
IDT71321SA/LA and IDT71421SA/LA
High Speed 2K x 8 Dual-Port Static RAM with Interrupts
Industrial and Commercial Temperature Ranges
8
T im ing Wa ve for m of Re a d Cycle N o. 2 , Eit he r Side (3)
NOTES:
1. Timing depends on which signal is asserted last, OE or CE.
2. Timing depends on which signal is de-asserted first, OE or CE.
3. R/W = VIH and OE = VIL, and the address is valid prior to or coincidental with CE transition LOW.
4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD.
T im ing Wa ve for m of Re a d Cycle N o. 1 , Eit he r Side (1)
NOTES:
1. R/W = VIH, CE = VIL, and is OE = VIL. Address is valid prior to the coincidental with CE transition LOW.
2. tBDD delay is required only in the case where the opposite port is completing a write operation to the same address location. For simultaneous read operations
BUSY has no relationship to valid output data.
3. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD.
ADDRESS
DATAOUT
tRC
tOH
PREVIOUS DATA VALID
tAA
tOH
DATA VALID
2691 drw 06
tBDDH
(2,3)
BUSYOUT
CE
tACE
tAOE
tHZ
tLZ
tPD
VALID DATA
tPU
50%
OE
DATAOUT
CURRENT
ICC
ISS
50%
2691 drw 07
(4)
(1)
(1)
(2)
(2)
(4)
tLZ
tHZ



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