ACE7403B

N-Channel Enhancement Mode Power MOSFET

VER 1.1

2

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V

(BR)DSS

V

30

33

V

Zero Gate Voltage Drain Current

I

DSS

V

1

μA

Gate Threshold Voltage

V

GS(TH)

V

0.8

1.1

1.4

V

Gate Leakage Current

I

GSS

±100

nA

Drain-Source On-state

Resistance

R

DS(on)

V

8

11

mΩ

10

16

Forward Transconductance

g

FS

15

S

Diode Forward Voltage

V

SD

0.85

1.2

V

Diode Forward Current

50

A

Switching

Total Gate Charge

Q

g

23

nC

Gate-Source Charge

Q

gs

7

nC

Gate-Drain Charge

Q

gd

4.5

nC

Turn-on Delay Time

10

ns

Turn-on Rise Time

8

ns

Turn-off Delay Time

t

d( off )

30

ns

Turn-Off Fall Time

5

ns

Dynamic

Input Capacitance

f=1.0MHz

2000

pF

Output Capacitance

280

pF

Reverse Transfer Capacitance

160

pF

environment with TA=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.