PAM8100

Document number: DS36986 Rev. 1 - 2

3 of 7

www.diodes.com

December 2015

© Diodes Incorporated

PAM8100

Electrical Characteristics (@VDD=3.3V, TA=+25°C, RL=10kΩ, C(PUMP)=C(PVSS) =1μF , CIN=2.2μF, RIN=15kΩ, Rfb=30kΩ,

Unless otherwise specified.)

PARAMETER

Symbol

Conditions

Min

Typ

Max

Units

Output Offset Voltage

No load

-

-

3

mV

Power-Supply Rejection Ratio

Input AC-GND,

f=1kHz,Vpp=200mV

-

70

-

dB

High-Level Output Voltage

VDD=3.3V

3.1

-

-

V

Low-Level Output Voltage

VDD=3.3V

-

-

-3.05

V

MUTE High

VDD=3.3V

1.5

-

-

V

MUTE Low

VDD=3.3V

-

-

0.4

V

Supply Current

No load, MUTE=VDD

-

10

-

mA

No load, MUTE=GND

-

10

-

mA

Output Voltage (outputs in

phase)

Vo

THD=1%, VDD=3.3V, f=1kHz

2.0

2.4

-

Vrms

Total Harmonic Distortion Plus

Noise

THD+N

VO=2Vrms, f=1kHz

-

0.0015

-

%

Crosstalk

CS

VO=1Vrms, f=1kHz

-

-110

-

dB

Maximum Capacitive Load

MCL

-

-

470

-

pF

Noise Output Voltage

Input AC-GND, A-weighted

-

13

-

uVrms

Signal-to-Noise Ratio

SNR

VO=2Vrms, A-weighted

-

104

-

dB

External UnderVoltage Detection

-

-

1.25

-

V

External Under-Voltage

Detection Hysteresis Current

IHYSI

-

-

5

-

µA

Charge Pump Frequency

-

200

300

400

kHz