DPG30IM300PC

ns

3

A

T

reverse recovery time

A

7

35

55

ns

I

RM

max. reverse recovery current

30

25

T= 125°C

VJ

=A/µs

200

/dt

t

rr

200

25

T= 125°C

VJ

V

=

V

Symbol

Definition

Ratings

typ.

max.

I

R

V

I

A

V

F

1.35

R

0.85 K/W

R

min.

30

V

1

T

= 25°C

VJ

T

=

°C

VJ

mA

0.1

V

=

V

R

T

= 25°C

VJ

I =

A

F

V

T =

°C

C

140

P

tot

175

W

T

= 25°C

C

R

K/W

30

300

max. non-repetitive reverse blocking voltage

reverse current, drain current

forward voltage drop

total power dissipation

Conditions

Unit

1.66

T

= 25°C

VJ

150

V

F0

V

0.70

T

=

°C

VJ

175

11.1

mΩ

V

1.08

T

=

°C

VJ

I =

A

F

V

30

1.43

I =

A

F

60

I =

A

F

60

threshold voltage

slope resistance

for power loss calculation only

µA

150

V

300

max. repetitive reverse blocking voltage

T

= 25°C

VJ

C

J

42

junction capacitance

V =

V

150

T

= 25°C

f = 1 MHz

R

VJ

pF

I

FSM

t = 10 ms; (50 Hz), sine;

T

= 45°C

VJ

max. forward surge current

V = 0 V

R

T

=

°C

VJ

175

360

A

300

FAV

d =

rectangular

0.5

average forward current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Fast Diode

300

0.25

IXYS reserves the right to change limits, conditions and dimensions.

20131125b

Data according to IEC 60747and per semiconductor unless otherwise specified

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