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ISCN1893 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças ISCN1893
Descrição Electrónicos  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCN1893 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

  ISCN1893 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCN1893 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
ISCN1893
·
FEATURES
·
Drain Current –ID= 12A@ TC=25℃
·
Drain Source Voltage-
: VDSS= 600V (Min)
·
Fast Switching
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATIONS
·
Designed for high efficiency switch mode power supply.
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±
30
V
ID
Drain Current-Continuous
12
A
IDM
Drain Current-Single Plused
48
A
PD
Power Dissipation
300
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.42
℃
/W
Rth j-a
Thermal Resistance, Junction to Ambient
62.5
℃
/W


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