MMRF5017HS datasheet(2/10 Pages) NXP

2 / 10 page

RF Device Data

NXP Semiconductors

MMRF5017HS

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

125

Vdc

Gate--Source Voltage

VGS

–8, 0

Vdc

Operating Voltage

VDD

0to+55

Vdc

Maximum Forward Gate Current @ TC =25C

IGMAX

Storage Temperature Range

Tstg

– 65to+150

C

Case Operating Temperature Range

– 55to+150

C

Operating Junction Temperature Range

– 55to+225

C

Absolute Maximum Channel Temperature (1)

TMAX

350

C

Total Device Dissipation @ TC =25C

Derate above 25C

154

0.77

W/C

Table 2. Thermal Characteristics

Characteristic (2)

Symbol

Value

Unit

Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case

CW: Case Temperature 81C, 80 W CW, 50 Vdc, IDQ = 200 mA, 940 MHz

RJC (IR)

1.3 (3)

C/W

Thermal Resistance by Finite Element Analysis, Channel--to--Case

Case Temperature 90C, PD =96 W

RCHC

(FEA)

1.77 (4)

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JS--001--2017)

2, passes 2500 V

Charge Device Model (per JS--002--2014)

II, passes 200 V

Table 4. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Drain--Source Breakdown Voltage

(VGS =–8 Vdc, ID =20 mAdc)

V(BR)DSS

150

—

Vdc

On Characteristics

Gate Threshold Voltage

(VDS =10 Vdc, ID =20 mAdc)

VGS(th)

–3.8

–3.0

–2.3

Vdc

Gate Quiescent Voltage

(VDD =48 Vdc, ID = 200 mAdc, Measured in Functional Test)

VGS(Q)

–3.6

–3.1

–2.3

Vdc

Gate--Source Leakage Current

(VDS =0 Vdc, VGS =–5 Vdc)

IGSS

–7.5

—

mAdc

Table 5. Ordering Information

Device

Tape and Reel Information

Package

MMRF5017HSR5

R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel

NI--400S--2S

1. Reliability tests were conducted at 225C. Operation with TMAX at 350C will reduce median time to failure.

2. Characterized in 30–940 MHz reference circuit at 940 MHz and 80 W CW output power.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

4. RCHC (FEA) must be used for purposes related to reliability and limitations on maximum channel temperature. MTTF may be estimated by

the expression MTTF (hours) = 10[A + B/(T + 273)], where T is the channel temperature in degrees Celsius, A = –10.3 and B = 8260.

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