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NCP4545IMNTWG Folha de dados(PDF) 3 Page - ON Semiconductor |
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NCP4545IMNTWG Folha de dados(HTML) 3 Page - ON Semiconductor |
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3 / 11 page ![]() NCP4545 www.onsemi.com 3 RECOMMENDED OPERATING RANGES Rating Symbol Min Max Unit Supply Voltage VCC 3 5.5 V Input Voltage VIN 0.5 6 V Ground GND 0 V Ambient Temperature TA 0 70 °C Junction Temperature TJ 0 90 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Conditions (Note 7) Symbol Min Typ Max Unit MOSFET On−Resistance VCC = 5.0 V; VIN = 1.8 V RON 4.7 5.9 m W VCC = 5.0 V; VIN = 5.0 V 4.9 6.1 VCC = 3.3 V; VIN = 1.8 V 5.0 6.7 VCC = 3.3 V; VIN = 5.0 V 5.9 7.0 Leakage Current (Note 8) VEN = 0 V; VIN = 6 V ILEAK 0.025 1.0 mA CONTROLLER Supply Standby Current (Note 9) VEN = 0V; VCC = 5.5 V ISTBY 5.0 15 mA Supply Dynamic Current (Note 10) VEN = VCC = 5.5 V IDYN 250 500 mA Bleed Resistance RBLEED 50 100 200 W EN Input High Voltage VIH 2.0 V EN Input Low Voltage VIL 0.8 V EN Pull Down Resistance NCP4545IMNTWG RPD 40 100 180 k W EN Pull Up Resistance NCP4545IMNTWG−L RPU 40 100 180 k W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7. VEN shown only for NCP4545IMNTWG (EN Active−High). 8. Average current from VIN to VOUT with MOSFET turned off. 9. Average current from VCC to GND with MOSFET turned off. 10. Average current from VCC to GND after charge up time of MOSFET. |
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