MLO75 datasheet(2/3 Pages) IXYS

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Symbol

Test Conditions

Characteristic Values

R, ID

VJ = TVJM; VR = VRRM; VD = VDRM

5mA

= 100 A; T

VJ = 25°C

1.4

For power-loss calculations only

0.85

5.0

D = 6 V;

VJ = 25°C

1.5

VJ = -40°C

1.6

D = 6 V;

VJ = 25°C

150

VJ = -40°C

200

p = 50 ms, f = 60 Hz, IT = ITAVM

VJ = TVJM;VD = 2/3 VDRM

0.25

5mA

VJ = 25°C; tP = 10 ms, VD = 6 V

300

G = 0.45 A; diG/dt = 0.45 A/ms

VJ = 25°C; VD = 6 V; RGK = ¥

100

VJ = 25°C; VD = 1/2 VDRM

G = 0.45 A; diG/dt = 0.45 A/ms

VJ = TVJM; IT = 50 A, tP = 200 ms; -di/dt = 10 A/ms

typ.

150

R = 100 V; dv/dt = 15 V/ms; VD = 2/3 VDRM

thJC

per thyristor/diode; DC current

0.55

K/W

per module

0.275

K/W

thJK

per thyristor/diode; DC current

0.75

K/W

per module

0.375

K/W

Creeping distance on surface

4.5

Creepage distance in air

4.5

Max. allowable acceleration

m/s2

Dimensions in mm (1 mm = 0.0394")

MLO 75

MMO 75

MLO 75

MMO 75

100

1000

0.1

1: I

GT, TVJ = 125°C

2: IGT, TVJ = 25°C

3: IGT, TVJ = -40°C

4: P

GAV = 0.5 W

5: PGM = 5 W

6: PGM = 10 W

GD, TVJ = 125°C

100

1000

100

1000

µs

0.01

0.1

100

150

200

250

300

RMS

VJ = 125°C

K = 85°C

VJ = 25°C

typ.

Limit

MMO 75

MLO 75

Fig. 2 Gate trigger delay time

Fig. 1 Gate trigger characteristics

Fig. 3 Rated RMS current versus time

(360° conduction)

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