S70JR datasheet(1/3 Pages) GENESIC

Nome de Peças	S70JR

Descrição Electrónicos	Silicon Standard Recovery Diode

PDF	3 Pages

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Fabricante Electrônico	GENESIC [GeneSiC Semiconductor, Inc.]

Página de início	http://www.genesicsemi.com/

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1 / 3 page

VRRM = 100 V - 600 V

IF =70 A

Features

• High Surge Capability

DO-5 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

S70B (R)

S70D (R)

Unit

Repetitive peak reverse voltage

VRRM

100

200

V

• Types from 100 V to 600 V VRRM

Silicon Standard

Recovery Diode

Conditions

600

S70B thru S70JR

S70J (R)

400

S70G (R)

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

2. Reverse polarity (R): Stud is anode.

pp

g

RMS reverse voltage

VRMS

70

140

V

DC blocking voltage

VDC

100

200

V

Continuous forward current

IF

70

A

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

S70B (R)

S70D (R)

Unit

Diode forward voltage

1.1

10

μA

15

mA

Thermal characteristics

Thermal resistance, junction -

case

RthJC

0.65

°C/W

-55 to 150

TC = 25 °C, tp = 8.3 ms

420

600

400

Surge non-repetitive forward

current, Half Sine Wave

IF,SM

-55 to 150

S70J (R)

10

S70G (R)

0.65

VR = 100 V, Tj = 180 °C

0.65

1.1

9

VR = 100 V, Tj = 25 °C

IF = 70 A, Tj = 25 °C

TC ≤ 140 °C

Conditions

280

1250

-55 to 150

70

15

A

1250

Reverse current

IR

VF

1250

V

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Feb 2016

Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

1

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