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Os motores de busca de Datasheet de Componentes eletrônicos |
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BBA02 Folha de dados(PDF) 1 Page - BeRex Corporation |
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BBA02 Folha de dados(HTML) 1 Page - BeRex Corporation |
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1 / 21 page  40-6000 MHz BroadBand AMP BBA02 1 Rev. B BeRex ●website: www.berex.com ●email: sales@berex.com Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex. All other trademarks are the property of their respective owners. © 2018 BeRex • Gain = 15.6 dB @ 2140MHz • OIP3 = 35.0 dBm @ 2140 MHz • Output P1 dB = 23.2 dBm @ 2140 MHz • N.F = 2.9dB @ 2140 MHz • Internally matched to 50 ohms • Lead-free/RoHS-compliant SOT-89 SMT package The BBA02 is a BroadBand, GaAs E-pHEMT Ampli- fier that is ideal for applications demanding high linearity in a wideband of 40-6000 MHz. The BBA02 is internally matched to 50 Ohms and re- quires no external matching components. It is available in RoHS-compliant SOT-89 SMT package. These devices are 100% DC and RF tested to as- sure quality and performance. Product Description Device Features • Repeaters • Mobile Infrastructure • Defense/Aerospace • LTE / WCDMA / EDGE / CDMA • General Purpose Wireless • IF amplifier, RF driver amplifier Applications Applications Circuit 1 Device performance _ measured on a BeRex evaluation board at 25°C, 50 Ω system. Typical Performance 1 Absolute Maximum Ratings Parameter Frequency Unit 70 900 2140 5800 MHz 3500 Gain 17.2 16.6 15.6 13.5 dB 14.5 S11 -13.6 -17.0 -15.7 -25.5 dB -12.5 S22 -15.8 -22.0 -22.5 -28.0 dB -24.5 OIP3 2 36.5 38.0 35.0 28.5 dBm 33.0 P1dB 22.6 23.1 23.2 17.2 dBm 21.2 LTE 20M ACLR 13.1 12.7 11.5 10.0 6.2 dBm Noise Figure 2.8 2.4 2.9 5.2 dB 3.2 Parameter Rating Unit Storage Temperature -55 to +155 °C Junction Temperature +220 °C Operating Voltage +7 V Supply Current 190 mA Input RF Power 20 dBm Operation of this device above any of these parameters may result in permanent damage. BBA02 C1 L1 C3 C4 C2 RFin RFout +5V 2 OIP3 _ measured on two tones with a output power 5dBm/ tone , F2—F1 = 1 MHz. BOM @GHz 0.04~0.5 0.5~3.0 3.0~4.0 5.0~6.0 4.0~5.0 C1 1nF 100pF 10pF 10pF 10pF C2 1nF 100pF 10pF 10pF 10pF C3 100pF 100pF 100pF 100pF 100pF C4 1nF 1nF 1nF 1nF 1nF L1 470nH 39nH 15nH 4.7nH 8.2nH Min. Typical Max. Unit Bandwidth 40 6000 MHz Id @ (Vd = 5V) 76 90 103 mA Vd 5.0 V dG/dT -0.004 dB/°C RTH 53.5 °C/W Operating Case Temperature -40 +105 °C - LTE set-up: 3GPP LTE, FDD E-TM3.1, 20MHz BW, ±20MHz offset, PAR 9.75 at 0.01% Prob. *ACLR Channel Power measured at -50dBc. |
Nº de peça semelhante - BBA02_18 |
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Descrição semelhante - BBA02_18 |
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