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RN1007 Folha de dados(PDF) 1 Page - Toshiba Semiconductor

Nome de Peças RN1007
Descrição Electrónicos  Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
PDF  5 Pages
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN1007 Folha de dados(HTML) 1 Page - Toshiba Semiconductor

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RN1007
~RN1009
2001-06-07
1
Type No.
R1 (kΩ)
R2 (kΩ)
RN1007
10
47
RN1008
22
47
RN1009
47
22
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1007,RN1008,RN1009
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2007~RN2009
Equivalent Circuit And Bias Resister Values
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
RN1007
6
RN1008
7
Emitter-base voltage
RN1009
VEBO
15
V
Collector current
IC
100
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55~150

°C
JEDEC
TO-92
EIAJ
SC-43
TOSHIBA
2-5F1B
Weight: 0.21g
Unit: mm


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