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SiC521 Folha de dados(PDF) 9 Page - Vishay Siliconix

Nome de Peças SiC521
Descrição Electrónicos  30 A VRPower® Integrated Power Stage
PDF  16 Pages
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
Página de início  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SiC521 Folha de dados(HTML) 9 Page - Vishay Siliconix

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SiC521, SiC521A
www.vishay.com
Vishay Siliconix
S15-0170-Rev. B, 09-Feb-15
9
Document Number: 62989
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 17 - ZCD_EN# Pull-Up Current vs. Temperature
Fig. 18 - Driver Quiescent Current vs. Temperature
PCB LAYOUT RECOMMENDATIONS
Step 1: VIN / PGND Planes and Decoupling
1. Layout VIN and PGND planes as shown above.
2. Ceramic capacitors should be placed directly between
VIN and PGND, and very close to the device for best
decoupling effect.
3. Different values / packages of ceramic capacitors should
be used to cover entire decoupling spectrum e.g. 1210,
0805, 0603, 0402.
4. Smaller capacitance values, placed closer to the devices,
VIN pin(s), results in better high frequency noise
absorbing.
Step 2: VSWH Plane
1. Connect output inductor to IC with large plane to lower
resistance.
2. VSWH plane also serves as a heat-sink for low-side
MOSFET. Make the plane wide and short to achieve the
best thermal path.
3. If
any
snubber
network
is
required,
place
the
components as shown above and the network can be
placed at bottom.
-13.0
-12.5
-12.0
-11.5
-11.0
-10.5
-10.0
-9.5
-9.0
-60
-40
-20
0
20
40
60
80
100 120 140
Temperature (°C)
V
ZCD_EN# = 0 V
270
290
310
330
350
370
390
410
430
-60
-40
-20
0
20
40
60
80
100 120 140
Temperature (°C)
V
PWM = FLOAT
VIN
VSWH
PGND
VIN Plane
PGND Plane
PGND Plane
VSWH
Snubber



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