FCX458 datasheet(4/7 Pages) DIODES

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FCX458

Document number: DS33053 Rev. 7 - 2

4 of 7

www.diodes.com

April 2017

FCX458

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

400

550

—

IC = 100µA

Collector-Emitter Breakdown Voltage

BVCES

400

550

IC = 100µA

Collector-Emitter Breakdown Voltage (Note 11)

BVCEO

400

450

—

IC = 1mA

Emitter-Base Breakdown Voltage

BVEBO

8.1

—

IE = 100µA

Collector-Base Cutoff Current

ICBO

—

100

VCB = 320V

Collector Cutoff Current

ICES

—

100

VCES = 320V

Emitter Cutoff Current

IEBO

—

VEB = 6V

Collector-Emitter Saturation Voltage (Note 11)

VCE(sat)

—

200

500

IC = 20mA, IB = 2mA

IC = 50mA, IB = 6mA

Base-Emitter Saturation Voltage (Note 11)

VBE(sat)

—

900

IC = 50mA, IB = 5mA

Base-Emitter Turn-On Voltage (Note 11)

VBE(on)

—

900

IC = 50mA, VCE = 10V

DC Current Gain (Note 11)

hFE

100

—

300

—

IC = 1mA, VCE = 10V

IC = 50mA, VCE = 10V

IC = 100mA, VCE = 10V

Transitional Frequency

—

MHz

IC = 10mA, VCE = 20V,

f = 20MHz

Output Capacitance

Cobo

—

VCB = 20V. f = 1MHz

Turn-On Time

ton

—

135

—

IC =50mA, VCE=100V,

IB1 = 5mA, IB2 = -10mA

Turn-Off Time

toff

—

2260

—

Note:

11. Measured under pulsed conditions.

Pulse width ≤ 300µs. Duty cycle ≤ 2%

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