STPS20170CT datasheet(3/5 Pages) STMICROELECTRONICS

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STPS20170CT

3/5

P(W)

F(AV)

0123456

789

I(A)

F(AV)

δ=tp/T

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

I(A)

F(AV)

100

125

150

175

T(°C)

amb

δ=tp/T

=15°C/W

th(j-a)

R=R

th(j-a)

th(j-c)

Fig. 2: Average forward current versus ambient

temperature (

δ = 0.5, per diode).

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

Fig. 4: Normalized avalanche power derating

versus junction temperature.

0.001

0.01

0.1

0.01

0.1

100

1000

t(µs)

P(t )

(1µs)

ARM p

ARM

Fig. 3: Normalized avalanche power derating ver-

sus pulse duration.

100

125

150

1.E-03

1.E-02

1.E-01

1.E+00

t(s)

I(A)

δ=0.5

T =50°C

T =75°C

T =125°C

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode).

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

t(s)

Z/R

th(j-c)

δ=tp/T

Single pulse

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration.

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