IXTY1R4N120P datasheet(2/5 Pages) IXYS

2 / 5 page

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTY1R4N120PHV

IXTA1R4N120P

IXTY1R4N120P

IXTP1R4N120P

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2 7,071,537

Symbol

Test Conditions

Characteristic Values

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max

DS = 20V, ID = 0.5 • ID25, Note 1

0.8

1.3

iss

666

oss

GS = 0V, VDS = 25V, f = 1MHz

rss

7.6

g(on)

24.8

GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

4.4

12.8

d(on)

d(off)

thJC

1.45

C/W

thCS

TO-220

0.50

C/W

Resistive Switching Times

GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

G = 25 (External)

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max

GS = 0V

1.4

Repetitive, Pulse Width Limited by T

4.2

F = IS, VGS = 0V, Note 1

1.5

900

F = 1.4A, -di/dt = 100A/μs, VR = 100V

Notes: 1. Pulse test, t  300s, duty cycle, d  2%.

2. On through-hole packages, R

DS(on) Kelvin test contact

location must be 5mm or less from the package body.

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