IXTH2N150 datasheet(4/4 Pages) IXYS

Nome de Peças	IXTH2N150

Descrição Electrónicos	N-Channel Enhancement Mode Fast Intrinsic Diode

PDF	4 Pages

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Fabricante Electrônico	IXYS [IXYS Corporation]

Página de início	http://www.ixys.com

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4 / 4 page

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTH2N150

Fig. 7. Transconductance

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

00.511.5

22.533.5

ID - Amperes

TJ = - 40ºC

125ºC

25ºC

Fig. 8. Forward Voltage Drop of Intrinsic Diode

0.3

0.4

0.5

0.6

0.7

0.8

0.9

VSD - Volts

TJ = 125ºC

TJ = 25ºC

Fig. 9. Gate Charge

QG - NanoCoulombs

VDS = 750V

I D = 1A

I G = 10mA

Fig. 10. Capacitance

100

1,000

10,000

VDS - Volts

f = 1 MHz

Ciss

Crss

Coss

Fig. 12. Maximum Transient Thermal Impedance

0.001

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

Fig. 11. Forward-Bias Safe Operating Area

0.01

0.1

100

1,000

10,000

VDS - Volts

TJ = 150ºC

TC = 25ºC

Single Pulse

1ms

100µs

RDS(on) Limit

10ms

100ms

IXYS REF: T_2N150 (4L-R97) 3-17-15

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