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GSOT04C Folha de dados(PDF) 2 Page - Vishay Siliconix

Nome de Peças GSOT04C
Descrição Electrónicos  ESD Protection Diode
PDF  4 Pages
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
Página de início  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

GSOT04C Folha de dados(HTML) 2 Page - Vishay Siliconix

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Document Number 85824
Rev. 1, 02-Jun-03
VISHAY
GSOT03C to GSOT36C
Vishay Semiconductors
Electrical Characteristics
TJ = 25 °C unless otherwise noted
1) 8/20 µs waveform used (see figure 2)
Typical Characteristics (T
amb = 25 °C unless otherwise specified)
Part Number
Device
Marking
Code
Rated
Stand-off
Voltage
Minimum
Breakdown
Voltage
Maximum
Clamping
Voltage
Maximum
Pulse Peak
Current
Maximum
Leakage
Current
Maximum
Capacitance
@ 1 mA
@ IP = 1 A
1)
@ IP = 5 A
1)
tp = 8/20 µs
@ VWM
@ 0 V, 1 MHz
VWM
VBR
VC
IPPM
ID
C
V
V
V
A
µA
pF
GSOT03C
03C
3.3
4.5
7.0
9.0
18
125
600
GSOT04C
04C
4.0
5.0
8.5
10.5
17
125
600
GSOT05C
05C
5.0
6.0
9.8
12.5
17
100
400
GSOT08C
08C
8.0
8.5
13.4
15.0
15
10
350
GSOT12C
12C
12.0
13.3
19.0
28.0
12
2
150
GSOT15C
15C
15.0
16.7
24.0
35.0
10
1
100
GSOT24C
24C
24.0
26.7
43.0
60.0
5
1
63
GSOT36C
36C
36.0
40
60.0
75.0
2
1
60
Figure 1. Non -Repetitive Peak Pulse Power vs. Pulse Time
Figure 2. Pulse Waveform
100
1000
10000
0.1
1.0
10
td - Pulse Duration ( µ s)
100
1000
10000
10
300W, 8/20
µs waveshape
17476
0
50
100
90
80
70
60
40
30
20
10
110
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
0
10
5
15
20
30
25
t - Time ( µ s)
td = I
PP
2
17477
Figure 3. Power Derating
TL - Lead Temperature
°C
0
20
40
60
80
100
0
50
25
75
100
125
150
Average Power
Peak Pulse Power
8/20
µ s
17478



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