MAT02_17 datasheet(4/6 Pages) AD

Nome de Peças	MAT02

Descrição Electrónicos	Low-noise, matched dual monolithic transistor

PDF	6 Pages

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Fabricante Electrônico	AD [Analog Devices]

Página de início	http://www.analog.com

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4 / 6 page

MAT02

Table I(cont’d)

Parameter

See notes at end of table

Symbol

Conditions 1/

Sub-

group

Limit

Min

Limit

Max

Units

Collector Base Leakage Current

ICBO

VCB = 40V

200

Collector Emitter Leakage

Current 4/

ICES

VCE = 40V, VBE = 0V

200

Collector-Collector Leakage

Current 4/

ICC

VCC = 40V

200

Bias Current

VCB = 0V, 40V

2, 3

Collector Saturation Voltage

VCESAT

IC = 1mA, IB = 100A

0.1

Breakdown Voltage

BVCEO

IC = 100A

Noise voltage density

IC=1mA,

fO = 10Hz

nV/

VCB=0V

fO = 100Hz

fO = 1000Hz

fO = 10KHz

TABLE I NOTES:

VCB = 15V; IC = 10A, unless otherwise specified.

Current gain match (hFE) is defined as:

min

)

(

100







Measured at IC = 10A and guaranteed by design over 1A IC  1mA.

ICC and ICES are verified by measurement of ICBO.

Guaranteed by VOS test

















for

TCV

T = 298°K for TA = +25°C.

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