NTE2566 datasheet(1/2 Pages) NTE

Nome de Peças	NTE2566

Descrição Electrónicos	Silicon Complementary Transistors High Current, High Speed Switch

PDF	2 Pages

Scroll/Zoom	100%

Fabricante Electrônico	NTE [NTE Electronics]

Página de início	http://www.nteinc.com

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NTE2566 (NPN) & NTE2567 (PNP)

Silicon Complementary Transistors

High Current, High Speed Switch

Features:

D Low Saturation Voltage

D Fast Switching Speed

D Isolated TO220 Type Package

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO

60V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector–Emitter Voltage, VCEO

50V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter–Base Voltage, VEBO

6V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Current, IC

Continuous

12A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak

15A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Power Dissipation, PC

TC = +25°C

30W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TA = +25°C

2W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature, TJ

+150

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, Tstg

–55

° to +150°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector Cutoff Current

ICBO

VCB = 40V, IE = 0

–

0.1

mA

Emitter Cutoff Current

IEBO

VEB = 4V, IC = 0

–

0.1

mA

DC Current Gain

hFE

VCE = 2V, IC = 1A

100

–

200

VCE = 2V, IC = 5A

30

–

Gain Bandwidth Product

fT

VCE = 5V, IC = 1A

–

10

–

MHz

Collector–Emitter Saturation Voltage

VCE(sat)

IC = 6A, IB = 0.6A

–

0.4

V

Collector–Base Breakdown Voltage

V(BR)CBO IC = 1mA, IE = 0

60

–

V

Collector–Emitter Breakdown Voltage

V(BR)CEO IC = 1mA, RBE = ∞

50

–

V

Emitter–Base Breakdown Voltage

V(BR)EBO IE = 1mA, IC = 0

6

–

V

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