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IPW65R037C6 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças IPW65R037C6
Descrição Electrónicos  N-Channel MOSFET Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IPW65R037C6 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
IPW65R037C6
IIPW65R037C6
·
FEATURES
·
Static drain-source on-resistance:
RDS(on)≤37mΩ
·
Enhancement mode:
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
DESCRITION
·
Fast Switching
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous
38.2
A
IDM
Drain Current-Single Pulsed
297
A
PD
Total Dissipation @TC=25℃
500
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(j-c)
Channel-to-case thermal resistance
0.25
℃
/W
Rth(j-a)
Channel-to-ambient thermal resistance
62
℃
/W


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