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LCP03 Folha de dados(PDF) 3 Page - STMicroelectronics |
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LCP03 Folha de dados(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() DocID025369 Rev 1 3/9 LCP03 Characteristics 9 Figure 3. Pulse waveform Figure 4. Relative variation of holding current versus junction temperature Table 3. Dynamic electrical characteristics Symbol Parameter Test conditions Min Typ Max Unit IHN Negative holding current 150 mA IRN Leakage current at VR- 5µA IRP Leakage current at VR+ 5µA VBOP Positive breakover voltage 1.5 kV 10/700 µs Rs = 20 Ω 110 V VBON Negative breakover voltage 75 C Capacitance VR = 50 V bias, VRMS = 1 V, F = 1 MHz 10 pF VR = 2 V bias, VRMS = 1 V, F = 1 MHz 22 pF 100 50 %I PP t t r p 0 t IH[T j]/IH[T j=25 °C] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -40 -20 0 20 40 60 80 100 120 140 T (°C) |
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