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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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IIRFR024N Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IIRFR024N Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRFR024N, IIRFR024N · FEATURES · Static drain-source on-resistance: RDS(on)≤75mΩ · Enhancement mode: · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · Fast Switching · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 17 A IDM Drain Current-Single Pulsed 68 A PD Total Dissipation @TC=25℃ 45 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 3.3 ℃ /W Rth(j-a) Channel-to-ambient thermal resistance 110 ℃ /W |
Nº de peça semelhante - IIRFR024N |
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Descrição semelhante - IIRFR024N |
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