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| Revenda | Nome de Peças | Fabricante Electrônico | Descrição Electrónicos | Price | Qty. BuyNow | |
![]() Rochester Electronics | IPB100N04S2L03ATMA2![]() | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 51,193 | |
| IPB100N06S2L05ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 55V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 9 | ||
IPB100N06S2L05ATMA2![]() | Infineon Technologies AG | IPB100N06 - 55V-60V N-Channel Automotive MOSFET RoHS : Compliant | 22,108 | |||
| IPB100N08S2L07ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 75V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 58,946 | ||
IPB160N04S2L03ATMA2![]() | Infineon Technologies AG | MOSFET N-Channel 40V 160A (Tc) TO-263-7 T/R RoHS : Compliant |
| 160 | ||
| IPB80N04S2L03ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 3,000 | ||
IPB80N06S2L07ATMA3![]() | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 784 | ||
IPB80N06S2L09ATMA2![]() | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 104,136 | ||
IPB80N06S2L11ATMA2![]() | Infineon Technologies AG | MOSFET N-Channel 55V 80A (Tc) TO-263-3 T/R RoHS : Compliant |
| 2,530 | ||
| IPB80N06S2LH5ATMA3 | Infineon Technologies AG | OptlMOS N-Channel Power MOSFET RoHS : Compliant |
| 16,000 | ||
IPB80N06S2LH5ATMA4![]() | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 11,156 | ||
| IPB80N08S2L07ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 21,040 | ||
| IPD15N06S2L64ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 19A I(D), 55V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant |
| 300 | ||
| IPD22N08S2L50ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 27A I(D), 75V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant |
| 1,720 | ||
| IPD26N06S2L35ATMA2 | Infineon Technologies AG | MOSFET N-Channel 500V 3.7A (Tc) TO-220-3 Tube RoHS : Compliant |
| 27,995 | ||
![]() NexGen Digital | STPS2L60AY | STMicroelectronics | RoHS : Compliant | 10,000 | ||
![]() PEI Genesis | D38999/20FJ37SN-CGMSS2-LC | SOURIAU-SUNBANK |
| 1 | ||
| DGL19S2L | Cinch Connectivity Solutions |
| 0 | |||
| S4953C2203S2L34 | SOURIAU-SUNBANK |
| 0 | |||
| D38999/26ZJ37PN-CGMSS2-LC | SOURIAU-SUNBANK |
| 0 | |||
![]() Rutronik | IPD15N06S2L64ATMA2![]() | Infineon Technologies AG | N-CH 55V 19A 64mOHm TO252 RoHS : Compliant |
| 70,000 | |
| BSS670S2LH6327XTSA1 | Infineon Technologies AG | N-CHANNEL-FET 0,54A 55V SOT23 RoHS : Compliant |
| 66,000 | ||
| IPD22N08S2L50ATMA1 | Infineon Technologies AG | N-CH 75V 22A 50mOhm TO252 RoHS : Compliant |
| 5,000 | ||
| IPD26N06S2L35ATMA2 | Infineon Technologies AG | N-CH 55V 30A 35mOhm TO252 RoHS : Compliant |
| 2,500 | ||
| IPD30N08S2L21ATMA1 | Infineon Technologies AG | MOSFET 75V 21.0mOHM AECQ TO252 RoHS : Compliant |
| 2,500 | ||
IPB160N04S2L03ATMA2![]() | Infineon Technologies AG | N-CH 40V 160A 2,7mOHm TO263-7 RoHS : Compliant |
| 1,000 | ||
IPB80N06S2L07ATMA3![]() | Infineon Technologies AG | N-CH 55V 80A 6.7mOHM TO263 RoHS : Compliant |
| 1,000 | ||
IPB80N06S2L11ATMA2![]() | Infineon Technologies AG | N-CH 55V 80A 10,7mOhm at 4,5V TO263-3 RoHS : Compliant |
| 1,000 | ||
| VS-3C05ET12S2L-M3 | Vishay Intertechnologies | SiC-DIODE 1200V 5A 1.35V TO-263AB 2L RoHS : Compliant |
| 25 | ||
| VS-3C10ET12S2L-M3 | Vishay Intertechnologies | SiC-DIODE 1200V 10A 1.35V TO-263AB 2L RoHS : Compliant |
| 25 | ||
| VS-3C15ET12S2L-M3 | Vishay Intertechnologies | SiC-DIODE 1200V 15A 1.35V TO-263AB 2L RoHS : Compliant |
| 25 | ||
| VS-3C20ET12S2L-M3 | Vishay Intertechnologies | SiC-DIODE 1200V 20A 1.35V TO-263AB 2L RoHS : Compliant |
| 25 | ||
![]() Avnet Asia | VS-E5TH1512S2LHM3 | Vishay Intertechnologies | (Alt: VS-E5TH1512S2LHM3) RoHS : Compliant | 0 | ||
| D5V0S1US2LP-7B | Diodes Incorporated | (Alt: D5V0S1US2LP-7B) RoHS : Compliant | 0 | |||
| VS-25ETS12S2LHM3 | Vishay Intertechnologies | (Alt: VS-25ETS12S2LHM3) RoHS : Compliant | 0 | |||
| D1V8L1BS2LP3-7 | Diodes Incorporated | (Alt: D1V8L1BS2LP3-7) RoHS : Compliant | 0 | |||
![]() DB Roberts | KN4C----5S2L-21 | Essentra Components | CLAMPING STAR KNOB 1.380 IN DI | 0 | ||
| KN5C----5S2L-21 | Essentra Components | CLAMPING STAR KNOB 1.380 IN DI | 0 | |||
![]() Maritex | STPS2L60A![]() | STMicroelectronics | Rectifier Diodes & Bridges; STPS2L60A; STMICROELECTRONICS; 100 �A; 2 A; 2; 75 A RoHS : Compliant |
| 56,994 | |
STPS2L30A![]() | STMicroelectronics | Rectifier Diodes & Bridges; STPS2L30A; STMICROELECTRONICS; 200 �A; 2 A; 2; 75 A RoHS : Compliant |
| 22,577 | ||
| BSS670S2L H6327 | Infineon Technologies AG | MOSFETs; BSS670S2L H6327; INFINEON TECHNOLOGIES; 55 V; 540 mA; 20 V; 360 mW |
| 6,004 | ||
| IPG20N06S2L-35 | Infineon Technologies AG | MOSFETs; IPG20N06S2L-35; INFINEON TECHNOLOGIES; 55 V; 20 A; 20 V; 65 W RoHS : Compliant |
| 3,779 | ||
| BSS670S2L | VBsemi Electronics Co Ltd | MOSFETs; BSS670S2L; VBSEMI; 55 V; 540 mA; 20 V; 360 mW |
| 2,997 | ||
STPS2L25U![]() | STMicroelectronics | Rectifier Diodes & Bridges; STPS2L25U; STMICROELECTRONICS; 90 �A; 2 A; 2; 75 A RoHS : Compliant |
| 2,047 | ||
| 12-21/S2C-FR2S2L/2C | Everlight Electronics Co Ltd | LEDs (Light Emitting Diodes); 12-21/S2C-FR2S2L/2C; EVERLIGHT; 120 �; 25 mA; Surface Mount; 2 mm RoHS : Compliant |
| 2,000 | ||
| IPD15N06S2L-64 | VBsemi Electronics Co Ltd | MOSFETs; IPD15N06S2L-64; VBSEMI; 55 V; 47 W |
| 1,880 | ||
| IPG20N06S2L-35-VB | VBsemi Electronics Co Ltd | MOSFETs; IPG20N06S2L-35-VB; VBSEMI |
| 50 |
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