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F2SP-D-R Revenda |
| Revenda | Nome de Peças | Fabricante Electrônico | Descrição Electrónicos | Price | Qty. BuyNow | |
![]() Richardson RFPD | NXH200T120H3Q2F2SG | onsemi | Si SiC Hybrid Module, Split T Type NPC, IGBT 1200 RoHS : Compliant | 0 | ||
| DCMC392M500DF2S | Knowles CDE | Alum Electrolytc Cap RoHS : Compliant | 0 | |||
| NXH400N100L4Q2F2SG | onsemi | Trans IGBT Module N-CH 1000V 360A 980W Tray RoHS : Compliant | 0 | |||
| NXH200T120H3Q2F2STNG | onsemi | Si/SiC Hybrid Module, Split T-Type NPC inverter So RoHS : Compliant | 0 | |||
![]() Avnet Silica | CNY17F2SM | onsemi | 6Pin DIP High BVCEO Phototransistor Output Optocoupler ONSSPCISTNJZ8E4V (Alt: CNY17F2SM) RoHS : Compliant | 2,000 | ||
| CNY17F2SR2M | onsemi | 6Pin DIP High BVCEO Phototransistor Output Optocoupler ONSSPCISTNJZ8E4V (Alt: CNY17F2SR2M) RoHS : Compliant | 0 | |||
| CNY17F2SR2VM | onsemi | 6Pin DIP High BVCEO Phototransistor Output Optocoupler ONSSPCISTNJZ8E4V (Alt: CNY17F2SR2VM) RoHS : Compliant | 0 | |||
| SF2-STARTER-KIT-ES | Microchip Technology Inc | SmartFusion2 SystemOnChip FPGA Stater Kit (Alt: SF2-STARTER-KIT-ES-2) RoHS : Compliant | 0 | |||
| NXH200T120H3Q2F2SG | onsemi | SiSiC Hybrid Module Split TType NPC inverter Solder pins (Alt: NXH200T120H3Q2F2SG) RoHS : Compliant | 0 | |||
| NXH400N100H4Q2F2SG | onsemi | SiC Hybrid Module IType NPC 1000 V 400 A IGBT 1200 V 100 A SiC Diode Solder pins (Alt: NXH400N100H4Q2F2SG) RoHS : Compliant | 0 | |||
| NXH450N65L4Q2F2S1G | onsemi | Power Integrated Module PIM IType NPC 650 V 450 A IGBT 650 V 250 A Diode 175degC Module Operating Junction Temperature (Alt: NXH450N65L4Q2F2S1G) RoHS : Compliant | 0 | |||
| NXH160T120L2Q2F2S1G | onsemi | Power Integrated Module PIM IGBT 1200 V 160 A and 650 V 100 A (Alt: NXH160T120L2Q2F2S1G) RoHS : Compliant | 0 | |||
| SF2-STARTER-KIT-ES-2 | Microchip Technology Inc | SmartFusion2 SystemOnChip FPGA Stater Kit (Alt: SF2-STARTER-KIT-ES-2) RoHS : Compliant | 0 | |||
![]() Braemac Americas-Symmetry | PCFL-180P-F2S | Nipron Co | 180W fanless ATX power supply |
| 1 | |
| BE890F2S110TMI1000 | Telit | BLE 4.2 FULL SENSORS / BLUEMOD+S42M/AI3ATH |
| 0 | ||
![]() Flip Electronics | NGTD8R65F2SWK | onsemi | Stock, Ship Today RoHS : Compliant |
| 17,557 | |
| NXH300B100H4Q2F2S1G | onsemi | Stock, Ship Today |
| 2,448 | ||
| CNY17F2SVM | onsemi | Stock, Ship Today RoHS : Compliant |
| 2,000 | ||
| CNY17F2SM | onsemi | Stock, Ship Today RoHS : Compliant |
| 995 | ||
| NXH400N100L4Q2F2SG | onsemi | Stock, Ship Today RoHS : Compliant |
| 36 | ||
| NXH400N100H4Q2F2SG | onsemi | Stock, Ship Today RoHS : Compliant | 36 | |||
| NXH450N65L4Q2F2S1G-01 | onsemi | Stock, Ship Today |
| 36 | ||
| NXH200B100H4F2SG | onsemi | Stock, Ship Today | 20 | |||
| NXH450B100H4Q2F2SG | onsemi | Stock, Ship Today RoHS : Compliant |
| 12 | ||
![]() Maritex | WCM3225F2SF-601T10 | Tai-Tech Advanced Electronics Co Ltd | Common Choke SMD 600 Ohm @ 100Mhz; 1A; RoHS : Compliant |
| 2,353 | |
![]() Vyrian | RJF2SA1B | Amphenol Corporation | Rectangular Connector Adapter, 8 Contacts(Side1), 8 Contacts(Side2), Female-Female RoHS : Compliant | 13,850 | ||
| NXH800A100L4Q2F2S2G | onsemi | Insulated Gate Bipolar Transistor, 309A I(C), 1000V V(BR)CES, N-Channel RoHS : Compliant | 12,917 | |||
| NXH400N100H4Q2F2SG-R | onsemi | Insulated Gate Bipolar Transistor, 409A I(C), 1000V V(BR)CES, N-Channel RoHS : Compliant | 12,207 | |||
| NXH160T120L2Q2F2SG | onsemi | Insulated Gate Bipolar Transistor, 181A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 12,156 | |||
| NGTD14T65F2SWK | onsemi | Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel RoHS : Compliant | 11,685 | |||
| NXH160T120L2Q2F2S1G | onsemi | Insulated Gate Bipolar Transistor, 181A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 11,418 | |||
| NGTD23T120F2SWK | onsemi | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel RoHS : Compliant | 9,360 | |||
| NGTD20T120F2SWK | onsemi | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel RoHS : Compliant | 8,295 | |||
| NXH200T120H3Q2F2SG | onsemi | Insulated Gate Bipolar Transistor, 256A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 7,448 | |||
| NXH300B100H4Q2F2SG-R | onsemi | Insulated Gate Bipolar Transistor, 73A I(C), 1000V V(BR)CES, N-Channel RoHS : Compliant | 6,967 | |||
| NXH350N100H4Q2F2S1G | onsemi | Insulated Gate Bipolar Transistor RoHS : Compliant | 6,565 | |||
| NXH600B100H4Q2F2SG | onsemi | Insulated Gate Bipolar Transistor RoHS : Compliant | 5,533 | |||
| NGTD17R120F2SWK | onsemi | Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon RoHS : Compliant | 4,993 | |||
| SNXH600B100H4Q2F2S1G-S | onsemi | Insulated Gate Bipolar Transistor RoHS : Compliant | 4,184 | |||
| NXH400N100L4Q2F2SG | onsemi | Insulated Gate Bipolar Transistor RoHS : Compliant | 3,215 | |||
![]() Win Source Electronics | WCM2012F2SF-221T03 | Tai-Tech Advanced Electronics Co Ltd | 2 Line Common Mode Choke Surface Mount 220 Ohms @ 100 MHz 300mA DCR 400mOhm RoHS : Compliant |
| 500,000 | |
| DF2S6.8FS | Toshiba America Electronic Components | Product for Use Only as Protection against Electrostatic Discharge (ESD). RoHS : Compliant |
| 380,000 | ||
| DF2S6.8UFS | Toshiba America Electronic Components | ESD Protection Diodes Silicon Epitaxial Planar RoHS : Compliant |
| 150,000 | ||
| DF2S6.8UFS(TPL3) | Toshiba America Electronic Components | Diode 5V 2-Pin fSC T/R |
| 135,050 | ||
| IPP082N10NF2S | Infineon Technologies AG | N-Channel 100V 77A 100W Through Hole TO-220-3 RoHS : Compliant |
| 30,201 | ||
| IPP082N10NF2SAKMA1 | Infineon Technologies AG | TRENCH >=100V / N-Channel 100 V 15A (Ta), 77A (Tc) 3.8W (Ta), 100W (Tc) Through Hole PG-TO220-3 RoHS : Compliant |
| 28,370 | ||
| IPP050N10NF2SAKMA1 | Infineon Technologies AG | TRENCH >=100V / N-Channel 100 V 19.4A (Ta), 110A (Tc) 3.8W (Ta), 150W (Tc) Through Hole PG-TO220-3 RoHS : Compliant |
| 24,320 |
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