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108R-2-R2 Revenda |
| Revenda | Nome de Peças | Fabricante Electrônico | Descrição Electrónicos | Price | Qty. BuyNow | |
![]() TME | RC1206JR-108R2L | YAGEO Corporation | Resistor: thick film; 8.2Ω; 1206; 250mW; ±5%; RC; 3.1x1.6x0.55mm RoHS : Compliant |
| 70,000 | |
| AC1206FR-108R2L | YAGEO Corporation | Resistor: thick film; 8.2Ω; SMD; 1206; 250mW; ±1%; AC; -55÷155°C RoHS : Compliant |
| 20,000 | ||
| EXL1V1010-8R2-R | Eaton Corporation | Inductor: wire; SMD; 8.2uH; ±20%; 16.3A; 9.7mm; 12.4mΩ; -40÷125°C RoHS : Compliant |
| 18,000 | ||
| 1SNA113108R2600 | TE Connectivity | 1SNA113108R2600 |
| 830 | ||
![]() Avnet Silica | DDB108R2 | Diodes Incorporated | Demo board (Alt: DDB108R2) RoHS : Compliant | 0 | ||
![]() Neutron USA | QSW-M2108R-2C-US | Qnap Systems Inc | RACKMOUNT SWITCH QSW-M2108-2C MGMT SW 8P 2.5GBS 2P 10GBS SFP+/N-B |
| 0 | |
![]() TE Connectivity | SQMBW108R2J | TE Connectivity | SQMB10 8R2 (WIRE) 5% Resistance Value: 8.2 Ω Element Type: Wire Wound Resistor Type: Power Resistor Passive Component Tolerance: 5 % Power Rating: 10 W Through-Hole Resistor | 8.2 Ω Wire Wound Power Resistor 5 % | Part Number: SQMBW108R2J | Internal Number: 2-2176633-3 | TE Connectivity RoHS : Compliant |
| 1,036 | |
| SQZW108R2J | TE Connectivity | SQZ10 8R2 5% Resistance Value: 8.2 Ω Element Type: Wire Wound Resistor Type: Power Resistor Passive Component Tolerance: 5 % Power Rating: 10 W Wirewound Resistor: Horizontal Mount | 8.2 Ω Wire Wound Power Resistor 5 % | Part Number: SQZW108R2J | Internal Number: 1623797-7 | TE Connectivity RoHS : Compliant |
| 1,033 | ||
| SQPW108R2J | TE Connectivity | SQP10 8R2 5% WIRE Resistance Value: 8.2 Ω Element Type: Wire Wound Resistor Type: Power Resistor Passive Component Tolerance: 5 % Power Rating: 10 W Wirewound Resistor: Horizontal Mount | 8.2 Ω Wire Wound Power Resistor 5 % | Part Number: SQPW108R2J | Internal Number: 1-1623795-8 | TE Connectivity RoHS : Compliant |
| 480 | ||
![]() Vyrian | RWM04108R20JR15E1 | Vishay Intertechnologies | Fixed Resistor, Wire Wound, 3W, 8.2ohm, 120V, 5% +/-Tol, 75ppm/Cel, Through Hole Mount | 18,246 | ||
BF1108R,215![]() | NXP Semiconductors | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET RoHS : Compliant | 12,988 | |||
BF1108R,235![]() | NXP Semiconductors | Power Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET RoHS : Compliant | 11,737 | |||
| CRCW12108R20JNEAHP | Vishay Intertechnologies | Fixed Resistor, Metal Glaze/thick Film, 0.75W, 8.2ohm, 200V, 5% +/-Tol, 200ppm/Cel, Surface Mount, 1210 RoHS : Compliant | 8,593 |
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