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Nome de Peças	30J121

Descrição Electrónicos	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

Tamanho do Arquivo	294.93 Kbytes

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Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

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Nº de peça semelhante - 30J121

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Toshiba Semiconductor	30J122	498Kb / 6P	4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING
	30J122A	199Kb / 7P	Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor rrection (PFC) Applications
	30J124	1Mb / 73P	Bipolar Small-Signal Transistors
	30J126	1Mb / 73P	Bipolar Small-Signal Transistors
AG Electronica	30J127	226Kb / 2P	MOSFET 600V 200A IGBT

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Toshiba Semiconductor	GT20J101	259Kb / 6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT50G321	287Kb / 6P	TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
	GT50J325	170Kb / 7P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT8G132	338Kb / 6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT15Q311	172Kb / 7P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT15M321	269Kb / 6P	TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
	GT40G121	151Kb / 5P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT60M322	191Kb / 6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT60M323	193Kb / 6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT80J101B	69Kb / 6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT