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Nome de Peças	RT3A66M

Descrição Electrónicos	Dual Transistor For Differential Amplify Application Silicon Pnp Epitaxial Type

Tamanho do Arquivo	157.53 Kbytes

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Fabricante Electrônico	ISAHAYA [Isahaya Electronics Corporation]

Página de início	http://www.idc-com.co.jp

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Nº de peça semelhante - RT3A66M

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Isahaya Electronics Cor...	RT3A77M	129Kb / 2P	Composite Transistor For General Purpose High Current Drive Application Silicon PNP Epitaxial Type
Isahaya Electronics Cor...	RT3AMMAM1	146Kb / 4P	Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type
List of Unclassifed Man...	RT3AMMM	46Kb / 4P	RT3AMMM
Isahaya Electronics Cor...	RT3AMMM	138Kb / 4P	Composite Transistor

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
List of Unclassifed Man...	2SA1530A	92Kb / 3P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
Isahaya Electronics Cor...	2SA1928	247Kb / 5P	FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
	INA5002AC1	397Kb / 2P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
	INA6005AP1	118Kb / 2P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
	INA6006AP1	169Kb / 4P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
	ISA1530AC1	172Kb / 4P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
	ISA1989AU1	85Kb / 3P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
	INA6006AS1	166Kb / 4P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
	RT3AMMAM1	146Kb / 4P	Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type
	RT3C66M	150Kb / 5P	Dual Transistor For Differential Amplify Application Silicon Npn Epitaxial Type