MS40N06 pdf, MS40N06 Descrição Electrónicos, MS40N06 Folha de dados, MS40N06 view ::: ALLDATASHEET :::

Nome de Peças	MS40N06

Descrição Electrónicos	Advanced high cell density Trench technology

Tamanho do Arquivo	585.05 Kbytes

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Fabricante Electrônico	BWTECH [Bruckewell Technology LTD]

Página de início	http://www.bruckewell-semi.com

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Nº de peça semelhante - MS40N06

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Bruckewell Technology L...	MS40N20	765Kb / 8P	200V N-Channel MOSFET

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Unitpower Technology Li...	UB3010	704Kb / 4P	N-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology
Unitpower Technology Li...	UB6006	698Kb / 4P	N-Ch 60V Fast Switching MOSFETs Advanced high cell density Trench technology
Kersemi Electronic Co.,...	BT151-6500R	409Kb / 3P	Advanced high cell denity trench technology for ultra RDS(ON)
	KMB9540	681Kb / 4P	Advanced high cell denity trench technology for ultra RDS(ON)
	KSM6N65	669Kb / 4P	Advanced high cell denity trench technology for ultra RDS(ON)
	KSM8N60	678Kb / 4P	Advanced high cell denity trench technology for ultra RDS
	KSM8N65	678Kb / 4P	Advanced high cell denity trench technology for ultra RDS
	KSM9Z24N	615Kb / 4P	Advanced high cell denity trench technology for ultra RDS
	KSM10N60	731Kb / 4P	Advanced high cell denity trench technology for ultra RDS
	KSM3710	645Kb / 4P	Advanced high cell denity trench technology for ultra RDS(ON)