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Nome de Peças	NE3516S02

Descrição Electrónicos	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

Tamanho do Arquivo	152.78 Kbytes

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Fabricante Electrônico	RENESAS [Renesas Technology Corp]

Página de início	http://www.renesas.com

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Nº de peça semelhante - NE3516S02

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
California Eastern Labs	NE3516S02	333Kb / 9P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
California Eastern Labs	NE3516S02-T1C	333Kb / 9P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
Renesas Technology Corp	NE3516S02-T1C	152Kb / 10P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
California Eastern Labs	NE3516S02-T1C-A	333Kb / 9P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
California Eastern Labs	NE3516S02-T1D	333Kb / 9P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Renesas Technology Corp	NE3513M04	228Kb / 10P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
	NE3521M04	414Kb / 10P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
	NE3520S03-A	505Kb / 10P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
California Eastern Labs	NE3521M04	653Kb / 9P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
	NE3520S03	505Kb / 10P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
	NE3516S02	333Kb / 9P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
	NE3513M04	1Mb / 9P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
Renesas Technology Corp	NE3516S02	152Kb / 10P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
	NE3521M04	414Kb / 10P	N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
	NE3513M04	239Kb / 10P	N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain