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Nome de Peças	GA200SA60SP

Descrição Electrónicos	Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

Tamanho do Arquivo	182.52 Kbytes

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Fabricante Electrônico	VISHAY [Vishay Siliconix]

Página de início	http://www.vishay.com

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Nº de peça semelhante - GA200SA60SP

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
International Rectifier	GA200SA60SP	322Kb / 9P	INSULATED GATE BIPOLAR TRANSISTOR
Vishay Siliconix	GA200SA60SP	181Kb / 9P	Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A 22-Jul-10
Vishay Siliconix	GA200SA60SP	181Kb / 9P	Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A 22-Jul-10

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
International Rectifier	IRG4BC30K	137Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
	IRG4BC30U	167Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
	IRG4PC30F	145Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
	IRG4PC40W	116Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
	IRGBF20F	255Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3A)
	IRG4BH20K-LPBF	298Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR ( VCES=1200V , VCE(on)typ.=3.17V , @VGE=15V.Ic=5.0A )
Vishay Siliconix	VS-GA250SA60S	288Kb / 9P	Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A 20-May-16
	GA200SA60SP	181Kb / 9P	Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A 22-Jul-10
	VS-GT250SA60S	196Kb / 9P	Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A 20-Jul-2021
	VS-GT250SA60S	196Kb / 9P	Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A 20-Jul-2021