SCT1000N170 pdf, SCT1000N170 Descrição Electrónicos, SCT1000N170 Folha de dados, SCT1000N170 view ::: ALLDATASHEET :::

Nome de Peças	SCT1000N170

Descrição Electrónicos	Silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package

Tamanho do Arquivo	305.7 Kbytes

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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Nº de peça semelhante - SCT1000N170

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Advanced Crystal Techno...	SCT100	762Kb / 3P	Software-Compensated Clipped-Sine-Output TCXO
Beijing Yaohuadechang E...	SCT100B	7Mb / 1P	0.333V Split core current transformer

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	SCTH35N65G2V-7	378Kb / 15P	Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package 17-Dec-2020
	SCTWA90N65G2V-4	239Kb / 13P	Silicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247-4 package 25-Nov-2020
	SCTW40N120G2V	205Kb / 12P	Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 package 09-Jun-2021
	SCTW100N120G2AG	217Kb / 11P	Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package 23-Jul-2020
	SCTW35N65G2VAG	206Kb / 12P	Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package 09-Sep-2020
	SCTW60N120G2AG	197Kb / 11P	Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package 18-May-2020
	SCTWA40N120G2AG	257Kb / 12P	Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package 22-Nov-2021
	SCTWA60N120G2AG	242Kb / 12P	Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package 16-Dec-2020
	SCT10N120AG	238Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package 21-Sep-2022