30J122 pdf, 30J122 Descrição Electrónicos, 30J122 Folha de dados, 30J122 view ::: ALLDATASHEET :::

Nome de Peças	30J122

Descrição Electrónicos	4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING

Tamanho do Arquivo	498.44 Kbytes

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Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

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Nº de peça semelhante - 30J122

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Toshiba Semiconductor	30J122A	199Kb / 7P	Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor rrection (PFC) Applications

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Toshiba Semiconductor	GT30J322	257Kb / 5P	N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)
Mitsubishi Electric Sem...	PS22056	119Kb / 9P	1200V/25A low-loss 4th generation IGBT inverter bridge
Toshiba Semiconductor	GT40Q323	150Kb / 6P	Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
	GT40T301	166Kb / 6P	Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications
	GT60M323	168Kb / 6P	Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
	GT60N322	166Kb / 6P	Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
	GT50J122	160Kb / 6P	Current Resonance Inverter Switching Application
	GT60J323H	182Kb / 6P	Current Resonance Inverter Switching Application
	GT35J321	290Kb / 6P	Fourth-generation IGBT Current Resonance Inverter Switching Applications
	GT50J328	232Kb / 6P	Current Resonance Inverter Switching Application Fourth Generation IGBT