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Nome de Peças	SIS456DN

Descrição Electrónicos	N-Channel MOSFET uses advanced SGT to minimize on-state reistance

Tamanho do Arquivo	1950.48 Kbytes

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Fabricante Electrônico	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Página de início	http://www.doingter.cn/

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Nº de peça semelhante - SIS456DN

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
SHENZHEN DOINGTER SEMIC...	ZC004TG	1Mb / 4P	N-Channel MOSFET uses advanced SGT to minimize on-state reistance
	ZC005TG	1Mb / 5P	N-Channel MOSFET uses advanced SGT to minimize on-state reistance
	AON7534	884Kb / 6P	N-Channel MOSFET uses advanced SGT to minimize on-state resistance
	MTB4D0N03BV8	2Mb / 5P	N-Channel MOSFET uses advanced SGT to minimize on-state resistance
	RU6050L	1Mb / 5P	N-Channel MOSFET uses advanced SGT technology
	SM1A06NSU	1Mb / 5P	N-Channel MOSFET uses advanced SGT technology
	TPCC8062-H	2Mb / 5P	N-Channel MOSFET uses advanced trench SGT to minimize on-state resistance
	TPN11003NL	1Mb / 4P	N-Channel MOSFET uses advanced trench technology to minimize on-state resistance
	UPA2820T1S	1Mb / 5P	N-Channel MOSFET uses advanced SGT to minimize on-state resistance
	WSD3066DN	2Mb / 5P	N-Channel MOSFET uses advanced SGT to minimize on-state resistance