| Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
 Toshiba Semiconductor |
30J121
|
294Kb / 6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
|
30J122
|
498Kb / 6P |
4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING
|
|
30J122A
|
199Kb / 7P |
Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor rrection (PFC) Applications
|
|
30J124
|
1Mb / 73P |
Bipolar Small-Signal Transistors
|
|
30J126
|
1Mb / 73P |
Bipolar Small-Signal Transistors
|