| Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
 Samsung semiconductor |
IRF230
|
212Kb / 5P |
N-CHANNEL POWER MOSFETS
|
 Seme LAB |
IRF230
|
22Kb / 2P |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET
|
 Fairchild Semiconductor |
IRF230
|
177Kb / 6P |
N-Channel Power MOSFETs, 12A, 150-200 V
|
 Intersil Corporation |
IRF230
|
69Kb / 7P |
8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs
October 1997 |
 International Rectifier |
IRF230
|
151Kb / 7P |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
|