GTVA261802FC-V1-R2 pdf, GTVA261802FC-V1-R2 Descrição Electrónicos, GTVA261802FC-V1-R2 Folha de dados, GTVA261802FC-V1-R2 view ::: ALLDATASHEET :::

Nome de Peças	GTVA261802FC-V1-R2

Descrição Electrónicos	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz

Tamanho do Arquivo	495.3 Kbytes

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Fabricante Electrônico	CREE [Cree, Inc]

Página de início	http://www.cree.com/

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Nº de peça semelhante - GTVA261802FC-V1-R2

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
WOLFSPEED, INC.	GTVA261802FC-V1-R2	536Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz Rev. 02.1, 2022-1-27

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Cree, Inc	GTVA261701FA	591Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 ??2690 MHz
	GTVA263202FC	458Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
	GTVA262701FA	489Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz
	GTVA262711FA	464Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 ??2690 MHz
WOLFSPEED, INC.	GTVA261701FA-V1	750Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Rev. 05.1, 2022-1-27
	GTVA262701FA_V2	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTVA261802FC	536Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz Rev. 02.1, 2022-1-27
	GTVA262701FA	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTVA262711FA	594Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 – 2690 MHz Rev. 04.4, 2022-1-27
	GTVA263202FC	632Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz Rev. 04.1, 2022-1-27