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LM3641 Folha de dados (PDF) - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
LM3641 Datasheet PDF - National Semiconductor (TI)
Nome de Peças LM3641
Download  LM3641 Download
Tamanho do Arquivo   304.04 Kbytes
página   16 Pages
Fabricante Electrônico  NSC [National Semiconductor (TI)]
Página de início  http://www.national.com
Logo NSC - National Semiconductor (TI)
Descrição Electrónicos Lithium-Ion Battery Pack Protection Circuit

LM3641 Datasheet (PDF)

Go To PDF Page Download Folha de dados
LM3641 Datasheet PDF - National Semiconductor (TI)

Nome de Peças LM3641
Download  LM3641 Click to download

Tamanho do Arquivo   304.04 Kbytes
página   16 Pages
Fabricante Electrônico  NSC [National Semiconductor (TI)]
Página de início  http://www.national.com
Logo NSC - National Semiconductor (TI)
Descrição Electrónicos Lithium-Ion Battery Pack Protection Circuit

LM3641 Folha de dados (HTML) - National Semiconductor (TI)


LM3641 Detalhes do produto

General Description
The LM3641 Lithium Protection Integrated Circuit resides inside a 3.6V Lithium-Ion battery pack consisting of a single
cell or multiple parallel cells. The IC controls the ON/OFF
state of a pair of low threshold N-channel power MOSFETs
placed in series with the battery cell(s). The purpose of this
MOSFET pair is to protect the cell(s) from inadvertent electrical over-stress. The IC compares the cell voltage against
internally programmed minimum and maximum limits. Transient voltage faults of approximately 1.25 seconds are tolerated.
The IC also monitors the bi-directional current flow in the battery pack by measuring the voltage across a robust 4 mΩ
current sensing resistor internal to the protection IC package. The IC turns OFF the MOSFET pair whenever any fault
limit is exceeded. Momentary current surges <4 ms are tolerated.
The Enable pin allows external ON/OFF control of the MOSFET pair and resets the IC after the MOSFET pair is turned
OFF and the pack is safe to operate again.
The limits for overcharge and overdischarge voltage, as well
as independent limits for each direction of overcurrent are
factory adjusted employing EEPROM.

Features
- Automatic battery disconnect when the cell is
over-charged or over-discharged.
- Maximum cell voltage for MOSFET conduction is factory
programmable between 4.0V and 4.4V with a ±25 mV
tolerance (0˚C to +60˚C).
- Minimum cell voltage for MOSFET conduction =
0.57•VMAX ±3.5% (0˚C to +60˚C).
- Internal 4 mΩ current sense resistor provides ±0.5A
maximum accuracy for detection of overcurrent faults.
The maximum charge and discharge current is factory
programmable between 1A and 5A. A single overcurrent
fault event opens and protects the MOSFET pair.
- Automatic detection of safe pack conditions for recovery
(MOSFET pair ON) from a fault condition (over/under
discharged or overcurrent).
- Average current drain = 1.2 µA typical.
- Optional Enable pack terminal can be used to prevent
accidental short circuit of pack and for maximizing the
shelf life of the pack (IC powers down when the pack is
not in use).
- Over-current events cause connection of an internal
50 kΩ “FET-Bypass” resistance across OFF MOSFET
pair. Loads >3–7 MΩ are required for return to
conduction mode.
- Over-charged states cause connection ofa5kΩ
“Cell-Bypass” resistor to ensure that the cell is not
allowed to be overcharged by leakage paths.




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Sobre a National Semiconductor (TI)


O National Semiconductor era uma empresa de semicondutores americanos que foi fundada em 1959.
A empresa era conhecida por suas inovações no campo dos circuitos integrados analógicos e de sinal misto e era um fornecedor líder de produtos de gerenciamento de energia e conversão de dados.
Os produtos nacionais do semicondutor foram usados ​​em uma variedade de aplicações, incluindo eletrônicos de consumo, industrial, automotivo e telecomunicações.
A empresa foi adquirida pela Texas Instruments em 2011 e seus produtos e tecnologias continuam sendo desenvolvidos e vendidos sob a marca do Texas Instruments.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.




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