Description
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class. 1 2 3 4 5 6 SOT23-6L

Features
■ Very low profile package
■ Conduction losses reduced
■ Switching losses reduced
■ 2.5 V gate drive
■ Very low threshold device

Applications
■ Switching applications