IRFBC40 Folha de dados(PDF) - Harris Corporation

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IRFBC40 Folha de dados (PDF) - Harris Corporation

IRFBC40 Datasheet PDF - Harris Corporation


Nome de Peças	IRFBC40

Download	IRFBC40 Download

Tamanho do Arquivo	66.91 Kbytes

página	7 Pages

Fabricante Electrônico	HARRIS [Harris Corporation]

Página de início	http://www.harris.com

Logo

Descrição Electrónicos

6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs

IRFBC40 Datasheet (PDF)

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Download Folha de dados

IRFBC40 Datasheet PDF - Harris Corporation


Nome de Peças	IRFBC40

Download	IRFBC40 Click to download

Tamanho do Arquivo	66.91 Kbytes

página	7 Pages

Fabricante Electrônico	HARRIS [Harris Corporation]

Página de início	http://www.harris.com

Logo

Descrição Electrónicos	6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs

IRFBC40 Folha de dados (HTML) - Harris Corporation

IRFBC40 Datasheet HTML 1Page - Harris Corporation

IRFBC40 Datasheet HTML 2Page - Harris Corporation

IRFBC40 Datasheet HTML 3Page - Harris Corporation

IRFBC40 Datasheet HTML 4Page - Harris Corporation

IRFBC40 Datasheet HTML 5Page - Harris Corporation

IRFBC40 Datasheet HTML 6Page - Harris Corporation

IRFBC40 Datasheet HTML 7Page - Harris Corporation

IRFBC40 Detalhes do produto

Description
These are N-Channel enhancement mode silicon gate power field effect transistors.

Features
• 6.2A and 5.4A, 600V
• rDS(ON) = 1.2Ω and 1.6Ω
• Repetitive Avalanche Energy Rated
• Simple Drive Requirements
• Ease of Paralleling
• Related Literature
    - TB334, “Guidelines for Soldering Surface Mount
        Components to PC Boards”

Nº de peça semelhante - IRFBC40

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	IRFBC40	92Kb / 8P	N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET Aug-1998
Intersil Corporation	IRFBC40	55Kb / 7P	6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET July 1999
International Rectifier	IRFBC40	97Kb / 8P	Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)
Vishay Siliconix	IRFBC40	590Kb / 8P	Power MOSFET 16-Jun-08
Kersemi Electronic Co.,...	IRFBC40	2Mb / 7P	Power MOSFET

Descrição semelhante - IRFBC40

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Intersil Corporation	IRF220	68Kb / 7P	4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs October 1997
	IRF9230	72Kb / 7P	-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs January 1998
	IRFAC40	67Kb / 7P	6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998
	IRFBC40	55Kb / 7P	6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET July 1999
Harris Corporation	IRFD9113	342Kb / 6P	-0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs
Unisonic Technologies	6N60	254Kb / 6P	6.2A, 600V N-CHANNEL POWER MOSFET
Unisonic Technologies	6N60Z	200Kb / 6P	6.2A, 600V N-CHANNEL POWER MOSFET
New Jersey Semi-Conduct...	IRF540	984Kb / 3P	25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs
New Jersey Semi-Conduct...	IRF420	142Kb / 3P	2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs
Nanjing International G...	NJ6N60	699Kb / 6P	6.2A 600V N-CHANNEL POWER MOSFET

Sobre a Harris Corporation

Harris Corporation was a Florida-based technology company that specialized in communications and information technology. The company was founded in 1895 and went through several iterations over the years, including mergers and acquisitions.

In 2019, Harris Corporation merged with L3 Technologies to form L3Harris Technologies, which is now one of the largest defense companies in the world. The company provides a wide range of products and services in the areas of aerospace, defense, communications, and intelligence.

Some of Harris Corporation's previous areas of focus included tactical radios, satellite communications systems, air traffic control systems, and cybersecurity solutions. The company's customers included the U.S. military, government agencies, and commercial organizations around the world.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.

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