GENERAL DESCRIPTION
The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE012 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.

FEATURES
• Single 5-volt program and erase operations
• Fast page-write operations
    - 128 bytes per page
    - Page program cycle: 10 mS (max.)
    - Effective byte-program cycle time: 39 μS
    - Optional software-protected data write
• Fast chip-erase operation: 50 mS
• Page program/erase cycles: 1,000
• Ten-year data retention
• Software and hardware data protection
• Low power consumption
    - Active current: 25 mA (typ.)
    - Standby current: 20 μA (typ.)
• Automatic program timing with internal VPP generation
• End of program detection
    - Toggle bit
    - Data polling
• Latched address and data
• TTL compatible I/O
• JEDEC standard byte-wide pinouts