TPC8001 Folha de dados(PDF) - Toshiba Semiconductor

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TPC8001 Folha de dados (PDF) - Toshiba Semiconductor

TPC8001 Datasheet PDF - Toshiba Semiconductor


Nome de Peças	TPC8001

Download	TPC8001 Download

Tamanho do Arquivo	514.47 Kbytes

página	7 Pages

Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

Logo

Descrição Electrónicos

Silicon N Channel MOS Type (MOSVI)

TPC8001 Datasheet (PDF)

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Download Folha de dados

TPC8001 Datasheet PDF - Toshiba Semiconductor


Nome de Peças	TPC8001

Download	TPC8001 Click to download

Tamanho do Arquivo	514.47 Kbytes

página	7 Pages

Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

Logo

Descrição Electrónicos	Silicon N Channel MOS Type (MOSVI)

TPC8001 Folha de dados (HTML) - Toshiba Semiconductor

TPC8001 Datasheet HTML 1Page - Toshiba Semiconductor

TPC8001 Datasheet HTML 2Page - Toshiba Semiconductor

TPC8001 Datasheet HTML 3Page - Toshiba Semiconductor

TPC8001 Datasheet HTML 4Page - Toshiba Semiconductor

TPC8001 Datasheet HTML 5Page - Toshiba Semiconductor

TPC8001 Datasheet HTML 6Page - Toshiba Semiconductor

TPC8001 Datasheet HTML 7Page - Toshiba Semiconductor

TPC8001 Detalhes do produto

Features
■ Small footprint due to small and thin package
■ Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.)
■ High forward transfer admittance : |Yfs| = 11 S (typ.)
■ Low leakage current : IDSS = 10 µA (max) (VDS = 30 V)
■ Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics

Nº de peça semelhante - TPC8001

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Toshiba Semiconductor	TPC8002	514Kb / 7P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)
VBsemi Electronics Co.,...	TPC8002	1Mb / 9P	N-Channel 20V (D-S) MOSFET
Toshiba Semiconductor	TPC8003	499Kb / 7P	Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 06-Jul-2004
	TPC8004	510Kb / 7P	Silicon N Channel MOS Type (MOSVI) 06-Feb-2002
	TPC8005-H	512Kb / 7P	Silicon N Channel MOS Type (High Speed U-MOS) 06-Feb-2002

Descrição semelhante - TPC8001

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Toshiba Semiconductor	TPC8002	514Kb / 7P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)
	TPC8004	510Kb / 7P	Silicon N Channel MOS Type (MOSVI) 06-Feb-2002
	TPC8301	433Kb / 7P	Silicon P Channel MOS Type (L2-MOSVI) 17-May-2002
	TPC8302	450Kb / 7P	Silicon P Channel MOS Type (L2-MOSVI) 17-May-2002
	TPC8202	339Kb / 7P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI) 20-Feb-2003
	2SK3934	75Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
	2SK3561	227Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)
	2SK3567	94Kb / 3P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI) 15-Apr-2003
	2SK3569	150Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI) 04-Mar-2004
	K4110	199Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2009-09-29

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