The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs

Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large–signal, common– source amplifier applications in 26 volt base station equipment.

• Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts
   Output Power @ P1db: 75 Watts
   Power Gain @ P1db: 18.5 dB
   Efficiency @ P1db: 55%
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW
   Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
   40µ″ Nominal.